Transparent thin film polarizing and optical control systems

ZnO-based transparent thin-film transistors

Highly transparent ZnO-based thin-film transistors ~TFTs! are fabricated with optical transmission ~including substrate! of ;75% in the visible portion of the electromagnetic spectrum. Current– voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ;10. Threshold voltages and channel mobilities of de...

Tin oxide transparent thin-film transistors

A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600 ̊C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancem...

Transparent p-n Heterojunction Thin Film Diodes

Transparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage char...

Explicit equations for the polarizing angles of a high-reflectance substrate coated by a transparent thin film

Multilayer thin-film coatings for optical communication systems

Recent developments in thin-film coatings for optical communication systems are reviewed. Particular emphasis is given to thin-film designs with dispersion related to the photonic crystal superprism effect. A single dispersive coating may be used for multiplexing or demultiplexing several wavelength channels by spatial beam shifting. 2004 Optical Society of America OCIS codes: (310.0310) Thin ...